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Diodes Incorporated
DMP4051LK3
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
-40
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 3)
(Note 9)
(Note 9)
V GS
E AS
I AS
± 20
50
20.3
V
mJ
A
(Note 5)
-10.5
Continuous Drain current
V GS = 10V
T A = 70 ° C (Note 5)
I D
-8.40
A
(Note 4)
-7.2
Pulsed Drain current
V GS = 10V
(Note 6)
I DM
-28.9
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 5)
(Note 5)
I S
I SM
-10.1
-28.9
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Note 4)
Symbol
Value
4.18
33.4
Unit
Power dissipation
Linear derating factor
(Note 5)
P D
8.9
71.4
W
mW/ ° C
(Note 7)
(Note 4)
2.14
17.1
29.9
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 5)
(Note 7)
(Note 8)
R θ JA
R θ JL
T J , T STG
14.0
58.4
2.46
-55 to 150
° C/W
° C
Notes:
3. AEC-Q101 V GS maximum is ±16V.
4. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. Same as note 4, except the device is measured at t ≤ 10 sec.
6. Same as note 4, except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. UIS in production with L = 100μH, V DD = -40V.
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
2 of 9
www.diodes.com
February 2012
? Diodes Incorporated
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